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Other articles related with "charge trapping memory"：
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96102 |
Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰) |
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Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement |
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Chin. Phys. B
2023 Vol.32 (9): 96102-096102
[Abstract]
(114)
[HTML 1 KB]
[PDF 839 KB]
(53)
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106802 |
Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵) |
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Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer |
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Chin. Phys. B
2019 Vol.28 (10): 106802-106802
[Abstract]
(593)
[HTML 1 KB]
[PDF 3326 KB]
(249)
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88502 |
Zhi-Yuan Lun(伦志远), Yun Li(李云), Kai Zhao(赵凯), Gang Du(杜刚), Xiao-Yan Liu(刘晓彦), Yi Wang(王漪) |
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Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level |
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Chin. Phys. B
2016 Vol.25 (8): 88502-088502
[Abstract]
(699)
[HTML 1 KB]
[PDF 816 KB]
(569)
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88501 |
Chu Yu-Qiong (褚玉琼), Zhang Man-Hong (张满红), Huo Zong-Liang (霍宗亮), Liu Ming (刘明) |
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Comparison between N2 and O2 anneals on the integrity of an Al2O3/Si3N4/SiO2/Si memory gate stack |
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Chin. Phys. B
2014 Vol.23 (8): 88501-088501
[Abstract]
(807)
[HTML 1 KB]
[PDF 364 KB]
(458)
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78501 |
Peng Ya-Hua(彭雅华), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Liu Fei(刘飞), Jin Rui(金锐), and Kang Jin-Feng(康晋锋) |
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The influence of thermally assisted tunneling on the performance of charge trapping memory |
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Chin. Phys. B
2012 Vol.21 (7): 78501-078501
[Abstract]
(1414)
[HTML 1 KB]
[PDF 303 KB]
(924)
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2678 |
Song Yun-Cheng(宋云成), Liu Xiao-Yan(刘晓彦), Du Gang(杜刚), Kang Jin-Feng(康晋锋), and Han Ru-Qi(韩汝琦) |
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Carriers recombination processes in charge trapping memory cell by simulation |
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Chin. Phys. B
2008 Vol.17 (7): 2678-2682
[Abstract]
(1745)
[HTML 1 KB]
[PDF 463 KB]
(477)
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